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    © 2016 Elsevier B.V.The effect of energetic ion bombardment on the properties of tantalum thin films was investigated. To achieve such energetic ion bombardment during the process the Ta thin films were deposited by deep oscillation magnetron sputtering, an ionized physical vapor deposition technique related to high power impulse magnetron sputtering. The peak power was between 49 and 130 kW and the substrate was silicon at room temperature and ground potential. The directionality and the energy…Read more