• Pressurizing field-effect transistors of few-layer MoS 2 in a diamond anvil cell
    with Y. Chen, F. Ke, P. Ci, C. Ko, T. Park, S. Saremi, H. Liu, Y. Lee, J. Suh, L. W. Martin, J. W. Ager, and B. Chen
    © 2016 American Chemical Society.Hydrostatic pressure applied using diamond anvil cells has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase sp…Read more