Hwan Ryu

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimSuperconductivity in monolayer niobium diselenide on bilayer graphene is studied by electrical transport. Monolayer NbSe2 is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have TC = 1.9 K. In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. The superconducting transition and upper critical fields in air exposed and selenium capped samples are compared. Schematic of monolayer NbSe2/bilayer graphene with selenium capping layer and electrical contacts.

© 2016 American Chemical Society.High quality WSe2 films have been grown on bilayer graphene with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

© 2016 Macmillan Publishers Limited.Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave order and superconductivity. In bulk NbSe 2 a CDW sets in at T CDW = 33 K and superconductivity sets in at T c = 7.2 K. Below T c these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single two-dimensional layer of NbSe 2 by means of low-temperature scanning tunnelling microscopy/spectroscopy, angle-resolved photoemission spectroscopy, and electrical transport measurements. We demonstrate that 3 × 3 CDW order in NbSe 2 remains intact in two dimensions. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of= 4 meV at the Fermi energy, which is accessible by means of STS owing to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified electronic structure of single-layer NbSe 2, thus providing insight into CDW formation and superconductivity in this model strongly correlated system.