Yu-Chu Chen

The structure of Au layers deposited by sputtering on oxidized p-type Si substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300° C results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500° C, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces

This report describes the analytical models Lawrence Berkeley National Laboratory developed to estimate impacts of the U.S. Environmental Protection Agency’s WaterSense® labeling program. The models assess national impacts for WaterSense labeled toilets, faucets, faucet aerators, showerheads, flushing urinals, commercial pre-rinse spray valves, and weather or soil moisture sensor-based irrigation controllers by analyzing national inputs for water use in residential and commercial/institutional markets. For irrigation controllers, LBNL’s methodology also incorporates a scenario that evaluates impacts in three key large states that are considered to be the principal market for “smart” irrigation controllers: California, Florida, and Texas. The models estimate impacts for the water savings attributable to the program and the net present value of the lifetime water savings from more efficient products.

© 2016 American Chemical Society.Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution, we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimSuperconductivity in monolayer niobium diselenide on bilayer graphene is studied by electrical transport. Monolayer NbSe2 is grown on bilayer graphene by molecular beam epitaxy and capped with a selenium film to avoid degradation in air. The selenium capped samples have TC = 1.9 K. In situ measurements down to 4 K in ultrahigh vacuum show that the effect of the selenium layer on the transport is negligible. The superconducting transition and upper critical fields in air exposed and selenium capped samples are compared. Schematic of monolayer NbSe2/bilayer graphene with selenium capping layer and electrical contacts.

© 2016 American Chemical Society.High quality WSe2 films have been grown on bilayer graphene with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

© 2016 Macmillan Publishers Limited.Layered transition metal dichalcogenides are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave order and superconductivity. In bulk NbSe 2 a CDW sets in at T CDW = 33 K and superconductivity sets in at T c = 7.2 K. Below T c these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single two-dimensional layer of NbSe 2 by means of low-temperature scanning tunnelling microscopy/spectroscopy, angle-resolved photoemission spectroscopy, and electrical transport measurements. We demonstrate that 3 × 3 CDW order in NbSe 2 remains intact in two dimensions. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of= 4 meV at the Fermi energy, which is accessible by means of STS owing to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified electronic structure of single-layer NbSe 2, thus providing insight into CDW formation and superconductivity in this model strongly correlated system.

Objects in the world usually have names at different hierarchical levels (e.g., beagle, dog, animal). This research investigates adults' ability to use cross‐situational statistics to simultaneously learn object labels at individual and category levels. The results revealed that adults were able to use co‐occurrence information to learn hierarchical labels in contexts where the labels for individual objects and labels for categories were presented in completely separated blocks, in interleaved blocks, or mixed in the same trial. Temporal presentation schedules significantly affected the learning of individual object labels, but not the learning of category labels. Learners' subsequent generalization of category labels indicated sensitivity to the structure of statistical input.

Prior research has shown that people can learn many nouns from a short series of ambiguous situations containing multiple words and objects. For successful cross-situational learning, people must approximately track which words and referents co-occur most frequently. This study investigates the effects of allowing some word-referent pairs to appear more frequently than others, as is true in real-world learning environments. Surprisingly, high-frequency pairs are not always learned better, but can also boost learning of other pairs. Using a recent associative model, we explain how mixing pairs of different frequencies can bootstrap late learning of the low-frequency pairs based on early learning of higher frequency pairs. We also manipulate contextual diversity, the number of pairs a given pair appears with across training, since it is naturalistically confounded with frequency. The associative model has competing familiarity and uncertainty biases, and their interaction is able to capture the individual and combined effects of frequency and contextual diversity on human learning. Two other recent word-learning models do not account for the behavioral findings.