Yue Xie

Discourse connection is a challenging aspect of writing in a second language. This study seeks to investigate the effects of two classroom instructions on discourse connection in writing for EFL college students, focusing on their argumentative writing. Three classes were exposed to different pre-task conditions: receiving reading materials that provide content support for the writing, receiving planning instructions on effective outlining, and receiving no resources. The results showed that the instructions helped students attain better overall coherence in writing. However, noticeable differences between the two experimental groups emerged in terms of cohesion features. The reading group was found to employ more lexical cohesion devices in writing than the outline group, which indicated a heightened genre awareness. This inquiry helped us identify the reading group’s alignment with content support materials, particularly the change in stance as a factor that contributes to a higher level of lexical cohesion in writing.

© The Author 2017.The observation of replica bands in single-unit-cell FeSe on SrTiO3 by angle-resolved photoemission spectroscopy has led to the conjecture that the coupling between FeSe electrons and the STO phonons are responsible for the enhancement of T c over other FeSe-based superconductors. However the recent observation of a similar superconducting gap in single-unit-cell FeSe/STO raised the question of whether a similar mechanism applies. Here we report the ARPES study of the electronic structure of FeSe/STO. Similar to the results in FeSe/STO, clear replica bands are observed. We also present a comparative study of STO and STO bare surfaces, and observe similar replica bands separated by approximately the same energy, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on different STO surface terminations are likely enhanced by a common mechanism.

We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization of the Hall resistance in units of the quantum unit of resistance, h/e2. The measurements were performed in a two-dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field is increased above the ν = 1 quantum Hall state. This quantization leads to a nearly perfect semicircle relation for the diagonal and Hall conductivities. Similar results are obtained with a higher-mobility n-type modulation-doped GaAs/AlGaAs sample, when the magnetic field is increased above the ν = 1/3 fractional quantum Hall state.